document number: 93574 for technical questions within your region, please contact one of the following: www.vishay.com revision: 21-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 30 a fred pt ? vs-eth3006s-m3, vs-ETH3006-1-M3 vishay semiconductors new product features ? hyperfast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified ac cording to jedec-jesd47 description/applications hyperfast recovery rectifiers designed with optimized performance of forward volt age drop, hyperfast recovery time, and soft recovery. the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. the extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-263ab (d 2 pak), to-262aa i f(av) 30 a v r 600 v v f at i f 2.65 v t rr (typ.) 27 ns t j max. 175 c diode variation single die v s -eth 3 006 s -m 3 v s -eth 3 006-1-m 3 to-262 n/c anode 1 3 2 d 2 pa k anode 1 3 ba s e cathode 2 n/c absolute maximum ratings parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 95 c 30 a non-repetitive peak surge current i fsm t c = 25 c 180 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 2.0 2.65 i f = 30 a, t j = 150 c - 1.4 1.8 reverse leakage current i r v r = v r rated - 0.02 30 a t j = 150 c, v r = v r rated - 50 300 junction capacitance c t v r = 600 v - 20 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93574 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006s-m3, vs-ETH3006-1-M3 vishay semiconductors hyperfast rectifier, 30 a fred pt ? new product dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 26 35 ns t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -26- t j = 125 c - 70 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7.6 - reverse recovery charge q rr t j = 25 c - 50 - nc t j = 125 c - 280 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc - 0.95 1.4 c/w thermal resistance, junction to ambient r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6 (5) - 12 (10) kgf cm (lbf in) marking device case style d 2 pak modified eth3006s case style to-262 eth3006-1
document number: 93574 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006s-m3, vs-ETH3006-1-M3 hyperfast rectifier, 30 a fred pt ? vishay semiconductors new product fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - max. thermal impedance z thjc characteristics forward voltage drop - v fm (v) in s tantaneou s forward current - i f (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 10 100 1000 t j = 25 c t j = 150 c t j = 175 c 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 100 1000 150 c 175 c 25 c 50 c 75 c 125 c 100 c rever s e current - i r (a) rever s e voltage - v r (v) rever s e voltage - v r (v) junction capacitance - c t (pf) 0 100 200 300 400 500 600 1 10 100 1000 single pulse (thermal resistance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 t1, rectangular pul s e duration ( s ) thermal impedance z thjc (c/w) 1e-051 e-041 e-031 e-021 e-01 1e+00 0.01 0.1 1 10
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93574 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006s-m3, vs-ETH3006-1-M3 vishay semiconductors hyperfast rectifier, 30 a fred pt ? new product fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt average forward current - i f(av) (a) allowable ca s e temperature (c) 0 5 10 15 20 25 30 35 40 45 70 80 90 100 110 120 130 140 150 160 170 180 dc average forward current - i f(av) (a) average power lo ss (w) 0 5 10 15 20 25 30 35 40 45 0 20 40 60 80 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rm s limit t rr (n s ) i f = 30 a, 125 c i f = 30 a, 25 c typical value di f /dt (a/ s ) 10 20 30 40 50 60 70 80 90 100 1000 t rr (nc) i f = 30 a, 125 c i f = 30 a, 25 c typical value di f /dt (a/ s ) 10 0 200 300 400 500 600 700 800 900 100 1000
document number: 93574 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 21-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006s-m3, vs-ETH3006-1-M3 hyperfast rectifier, 30 a fred pt ? vishay semiconductors new product fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93574 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 21-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-eth3006s-m3, vs-ETH3006-1-M3 vishay semiconductors hyperfast rectifier, 30 a fred pt ? new product ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description vs-eth3006s-m3 50 1000 antistatic plastic tube vs-ETH3006-1-M3 50 1000 antistatic plastic tube vs-eth3006strr-m3 800 800 13" diameter reel vs-eth3006strl-m3 800 800 13" diameter reel links to related documents dimensions to-263ab (d 2 pak) www.vishay.com/doc?95046 to-262aa www.vishay.com/doc?95419 part marking information to-263ab (d 2 pak) www.vishay.com/doc?95444 to-262aa www.vishay.com/doc?95443 packaging information to-263ab (d 2 pak) www.vishay.com/doc?95032 2 - circuit configuration e = single diode 1 - vishay semiconductors product 3 - t = to-220 4 - h = hyperfast recovery time 5 - current code (30 = 30 a) 6 - voltage code (06 = 600 v) 7 - ? s = d 2 pak - ? -1 = to-262 device code 5 1 3 2 4 6 vs- e t h 30 06 s trl -m3 7 8 9 9 - -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free 8 - ? none = tube (50 pieces) - ? trl = tape and reel (left oriented, for d 2 pak package) - ? trr = tape and reel (right oriented, for d 2 pak package)
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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